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   AUIRFR2407 hexfet ? power mosfet www.irf.com 1 pd - 97689a automotive grade gds gate drain source d-pak AUIRFR2407    features  


      
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    & absolute maximum ratings stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. the thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. ambient temperature (t a ) is 25c, unless otherwise specified. hexfet ? is a registered trademark of international rectifier. * qualification standards can be found at http://www.irf.com/ parameter units i d @ t c = 25c continuous drain current, v gs @ 10v i d @ t c = 100c continuous drain current, vgs @ 10v a i dm pulsed drain current p d @t c = 25c power dissipation w linear derating factor w/c v gs gate-to-source voltage v e as single pulse avalanche energy (thermally limited)  mj i ar avalanche current a e ar repetitive avalanche energy mj dv/dt peak diode recovery dv/dt  v/ns t j operating junction and t stg storage temperature range c soldering temperature, for 10 seconds (1.6mm from case ) thermal resistance parameter typ. max. units r jc junction-to-case  ??? 1.4 r ja junction-to-ambient (pcb mount)  ??? 50 c/w r ja junction-to-ambient ??? 110 -55 to + 175 300 110 0.71 20 max. 42 29 170 5.0 11 130 25 v (br)dss 75v r ds(on) typ. 21.8m max 26m s d g free datasheet http://

2 www.irf.com   repetitive rating; pulse width limited by max. junction temperature.  starting t j = 25c, l = 0.42mh r g = 25 , i as = 25a.  i sd 25a, di/dt 290a/ s, v dd v (br)dss , t j 175c.  pulse width 300 s; duty cycle 2%.  c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss .  when mounted on 1" square pcb (fr-4 or g-10 material) . for recommended footprint and soldering techniques refer to application note #an-994. r is measured at t j of approximately 90c. s d g s d g static electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units v (br)dss drain-to-source breakdown voltage 75 ??? ??? v a ??? ??? 250 i gss gate-to-source forward leakage ??? ??? 200 na gate-to-source reverse leakage ??? ??? -200 dynamic electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units q g total gate charge ??? 74 110 q gs gate-to-source charge ??? 13 19 nc q gd gate-to-drain ("miller") charge ??? 22 34 t d(on) turn-on delay time ??? 16 ??? t r rise time ??? 90 ??? t d(off) turn-off delay time ??? 65 ??? ns t f fall time ??? 66 ??? l d internal drain inductance ??? 4.5 ??? between lead, nh 6mm (0.25in.) l s internal source inductance ??? 7.5 ??? from package and center of die contact c iss input capacitance ??? 2400 ??? c oss output capacitance ??? 340 ??? pf c rss reverse transfer capacitance ??? 77 ??? c oss output capacitance ??? 15700 ??? c oss output capacitance ??? 220 ??? c oss eff. effective output capacitance ??? 220 ??? diode characteristics parameter min. typ. max. units i s continuous source current ??? ??? 42 (body diode) a i sm pulsed source current ??? ??? 170 (body diode)  v sd diode forward voltage ??? ??? 1.3 v t rr reverse recovery time ??? 100 150 ns q rr reverse recovery charge ??? 400 600 nc t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) m v ds = 25v conditions v ds = v gs , i d = 250 a v gs = 0v, v ds = 1.0v, ? = 1.0mhz v ds = 25v, i d = 25a  i d = 25a v ds = 60v v gs = 20v v gs = -20v v gs = 10v  v ds = 75v, v gs = 0v v ds = 60v, v gs = 0v, t j = 150c mosfet symbol v dd = 38v i d = 25a r g = 6.8 conditions v gs = 10v  v gs = 0v ? = 1.0mhz, see fig. 5 v gs = 0v, v ds = 0v to 60v v gs = 0v, v ds = 60v, ? = 1.0mhz conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1ma v gs = 10v, i d = 25a  t j = 25c, i f = 25a di/dt = 100a/ s  t j = 25c, i s = 25a, v gs = 0v  showing the integral reverse p-n junction diode. free datasheet http://

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 4 qualification information ? d-pak msl1 rohs compliant yes esd machine model class m4 (+/- 500v) ??? aec-q101-002 human body model class h1c (+/- 2000v) ??? aec-q101-001 charged device model class c5 (+/- 2000v) ??? aec-q101-005 moisture sensitivity level qualification level automotive (per aec-q101) ?? comments: this part number(s) passed automotive qualification. ir?s industrial and consumer qualification level is granted by extension of the higher automotive level. free datasheet http://

4 www.irf.com free datasheet http://

www.irf.com 5 free datasheet http://

6 www.irf.com 25 50 75 100 125 150 175 t c , case temperature (c) 0 10 20 30 40 50 i d , d r a i n c u r r e n t ( a ) fig 9. maximum drain current vs. case temperature free datasheet http://

www.irf.com 7 free datasheet http://

8 www.irf.com free datasheet http://

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    !  "#$ *        + , tr 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) 12.1 ( .476 ) 11.9 ( .469 ) feed direction feed direction 16.3 ( .641 ) 15.7 ( .619 ) trr trl notes : 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters ( inches ). 3. outline conforms to eia-481 & eia-541. notes : 1. outline conforms to eia-481. 16 mm 13 inch -.             /0 '   .11 &&1(1 free datasheet http://

www.irf.com 11 ordering information base part number package type standard pack complete part number form quantity AUIRFR2407 dpak tube 75 AUIRFR2407 tape and reel 2000 AUIRFR2407tr tape and reel left 3000 AUIRFR2407trl tape and reel right 3000 AUIRFR2407trr free datasheet http://

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